N-Channel MOSFET. GSM2318A Datasheet

GSM2318A MOSFET. Datasheet pdf. Equivalent

Part GSM2318A
Description N-Channel MOSFET
Feature GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description GSM2318A, N-Channel enhancement .
Manufacture Globaltech
Datasheet
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GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Desc GSM2318A Datasheet
Recommendation Recommendation Datasheet GSM2318A Datasheet





GSM2318A
GSM2318A
40V N-Channel Enhancement Mode MOSFET
Product Description
GSM2318A, N-Channel enhancement mode
MOSFET, uses Advanced Trench
Technology to provide excellent RDS(ON), low
gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line
power loss are needed in commercial
industrial surface mount applications.
Features
„ 40V/2.6A,RDS(ON)=68m@VGS=10V
„ 40V/2.2A,RDS(ON)=88m@VGS=4.5V
„ Super high density cell design for
extremely low RDS (ON)
„ Exceptional on-resistance and
maximum DC current capability
„ SOT-23 package design
Applications
„ Portable Equipment
„ Battery Powered System
„ Net Working System
Packages & Pin Assignments
GSM2318AJZF (SOT-23)
1 Gate
2 Source
3 Drain
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GSM2318A
Ordering Information
GS P/N
GSM2318A JZ F
Package Code
Pb Free Code
Part Number
GSM2318AJZF
Package
SOT-23
Quantity Reel
3000 PCS
Marking Information
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TJ=150)
TA=25ºC
TA=70ºC
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25ºC
TA=70ºC
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
40
±20
2.6
2.2
10
1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
ºC
ºC
ºC/W
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