N-Channel MOSFET. GSM8412 Datasheet

GSM8412 MOSFET. Datasheet pdf. Equivalent

Part GSM8412
Description N-Channel MOSFET
Feature GSM8412 100V N-Channel Enhancement Mode MOSFET Product Description GSM8412, N-Channel enhancement m.
Manufacture Globaltech
Datasheet
Download GSM8412 Datasheet

GSM8412 100V N-Channel Enhancement Mode MOSFET Product Desc GSM8412 Datasheet
Recommendation Recommendation Datasheet GSM8412 Datasheet





GSM8412
GSM8412
100V N-Channel Enhancement Mode MOSFET
Product Description
GSM8412, N-Channel enhancement mode
MOSFET, uses Advanced Trench
Technology to provide excellent RDS(ON), low
gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial
industrial surface mount applications.
Packages & Pin Assignments
GSM8412XF (SOT-223)
Features
„ 100V/3.6A,RDS(ON)=300m@VGS=10V
„ 100V/3.0A,RDS(ON)=310m@VGS=4.5V
„ Super high density cell design for extremely
low RDS (ON)
„ SOT-223 package design
Applications
„ Motor and Load Control
„ Power Management in White LED System
„ Push Pull Converter
„ LCD TV Inverter & AC/DC Inverter Systems.
1 Gate
2 Drain
3 Source
Ordering Information
GS P/N
GSM8412 X F
Package Code
Pb Free Code
www.gs-power.com 1



GSM8412
Marking Information
Part Number
GSM8412XF
Package
SOT-223
Part Marking
8412YYWW
Quantity Reel
2500PCS
Absolute Maximum Ratings
(TA=25ºC Unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25ºC
TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25ºC
TA=70ºC
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient
Typical
100
±20
3.6
2.6
8
1.6
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
ºC
ºC
ºC/W
www.gs-power.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)