N-Channel MOSFET. GSMDS6904 Datasheet

GSMDS6904 MOSFET. Datasheet pdf. Equivalent

Part GSMDS6904
Description N-Channel MOSFET
Feature GSMDS6904 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
Download GSMDS6904 Datasheet

GSMDS6904 60V N-Channel MOSFETs Product Description These N GSMDS6904 Datasheet
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GSMDS6904
GSMDS6904
60V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 60V, 10A, RDS(ON)=12m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS Guaranteed
„ Green Device Available
„ SOP-8 package design
Applications
„ Motor Drive
„ Power Tools
„ LED Lighting
Packages & Pin Assignments
GSMDS6904SF (SOP-8)
Top View
Pin Description
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
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GSMDS6904
Ordering Information
GS P/N
GSMDS6904 S F
Package Code
Pb Free Code
Part Number
GSMDS6904SF
Package
SOP-8
Marking Information
Quantity Reel
4000 PCS
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
Typical
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (*1)
TC=25
TC=100
Single Pulse Avalanche Energy (*2)
60
±20
10
6.3
40
61
IAS Single Pulse Avalanche Current (*2)
35
PD Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
2.5
0.02
TJ Operating Junction Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +150
RθJA Thermal Resistance-Junction to Ambient
50
Note 1: Repetitive Rating: Pulsed width limited by maximum junction temperature.
Note 2: VDD=25V, VGS=10V, L=0.1mH, IAS=35A, RG=25Ω,Starting TJ=25.
Unit
V
V
A
A
mJ
A
W
W/
/W
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