N-Channel MOSFET. GSMDD6966A Datasheet

GSMDD6966A MOSFET. Datasheet pdf. Equivalent

Part GSMDD6966A
Description N-Channel MOSFET
Feature GSMDD6966A 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
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GSMDD6966A 60V N-Channel MOSFETs Product Description These GSMDD6966A Datasheet
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GSMDD6966A
GSMDD6966A
60V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 60V, 55A, RDS(ON)=8.2m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ Green Device Available
„ TO-252-2L package design
Applications
„ Networking
„ Load Switch
„ LED Applications
Packages & Pin Assignments
GSMDD6966ADF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMDD6966A
Ordering Information
GS P/N
GSMDD6966A D F
Package Code
Pb Free Code
Part Number
GSMDD6966ADF
Package
TO-252-2L
Marking Information
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
Typical
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC=25
TC=100
Single Pulse Avalanche Energy (Note 2)
60
±25
55
34.8
220
238
IAS Single Pulse Avalanche Current (Note 2)
69
PD Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
102
0.82
TJ Operating Junction Temperature Range
-50 to +150
TSTG
Storage Temperature Range
-50 to +150
RθJA Thermal Resistance-Junction to Ambient
62
RθJC Thermal Resistance-Junction to Case
1.22
Note 1: Repetitive Rating: Pulsed width limited by maximum junction temperature.
Note 2: VDD=25V, VGS=10V, L=0.1mH, IAS=69A, Starting TJ=25.
Unit
V
V
A
A
mJ
A
W
W/
/W
/W
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