N-Channel MOSFET. GSMDD0906 Datasheet

GSMDD0906 MOSFET. Datasheet pdf. Equivalent

Part GSMDD0906
Description N-Channel MOSFET
Feature GSMDD0906 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
Download GSMDD0906 Datasheet

GSMDD0906 100V N-Channel MOSFETs Product Description These GSMDD0906 Datasheet
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GSMDD0906
GSMDD0906
100V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are planar stripe, DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
switch mode power supply.
Features
„ 100V, 15A, RDS(ON)=90m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS guaranteed
„ Green Device Available
„ TO-252-2L package design
Applications
„ Networking
„ Load Switch
„ LED applications
Packages & Pin Assignments
GSMDD0906DF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMDD0906
Ordering Information
GS P/N
GSMDD0906 D F
Package Code
Pb Free Code
Part Number
GSMDD0906DF
Package
TO-252-2L
Marking Information
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
RθJC
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
100
±20
15
9.5
60
50
0.4
-50 to +150
-50 to +150
62
2.5
Unit
V
V
A
A
W
W/
/W
/W
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