N-Channel MOSFET. GSMD35N15 Datasheet

GSMD35N15 MOSFET. Datasheet pdf. Equivalent

Part GSMD35N15
Description N-Channel MOSFET
Feature GSMD35N15 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
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GSMD35N15 150V N-Channel MOSFETs Product Description These GSMD35N15 Datasheet
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GSMD35N15
GSMD35N15
150V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 150V, 35A, RDS(ON)=46m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ VGS Guaranteed ±25V
„ Green Device Available
„ TO-252-2L package design
Applications
„ Motor Drive
„ DC-DC Switching
„ LED Applications
„ Power Tools
Packages & Pin Assignments
GSMD35N15DF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMD35N15
Ordering Information
GS P/N
GSMD35N15 D F
Package Code
Pb Free Code
Part Number
GSMD35N15DF
Marking Information
Package
TO-252-2L
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
Typical
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
TA=25
TA=100
150
±25
35
22
140
100
IAS Single Pulse Avalanche Current
14.2
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
114
0.91
TJ Operating Junction Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +150
RθJA Thermal Resistance-Junction to Ambient
50
RθJC Thermal Resistance-Junction to Case
1.1
Note 1: Repetitive Rating : Pulsed width limited by maximum junction temperature.
Note 2: VDD=50V,VGS=10V,L=1mH,IAS=10A,RG=25Ω,Starting TJ=25.
Unit
V
V
A
A
mJ
A
W
W/
/W
/W
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