N-Channel MOSFET. GSMDD10N20 Datasheet

GSMDD10N20 MOSFET. Datasheet pdf. Equivalent

Part GSMDD10N20
Description N-Channel MOSFET
Feature GSMDD10N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field .
Manufacture Globaltech
Datasheet
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GSMDD10N20 200V N-Channel MOSFETs Product Description These GSMDD10N20 Datasheet
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GSMDD10N20
GSMDD10N20
200V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 200V, 8A, RDS(ON)=400m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ VGS Guaranteed ±25V
„ Green Device Available
„ TO-252-2L package design
Applications
„ Notebook
„ Load Switch
„ LED Applications
„ Li Battery Pack Application
Packages & Pin Assignments
GSMDD10N20DF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMDD10N20
Ordering Information
GS P/N
GSMDD10N20 D F
Package Code
Pb Free Code
Part Number
GSMDD10N20DF
Package
TO-252-2L
Marking Information
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
Typical
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
200
±25
8
5
32
50
0.4
TJ Operating Junction Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +150
RθJA Thermal Resistance-Junction to Ambient
62
RθJC Thermal Resistance-Junction to Case
2.5
Note 1: Repetitive Rating : Pulsed width limited by maximum junction temperature.
Unit
V
V
A
A
W
W/
/W
/W
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