N-Channel MOSFET. GSMDC3960X Datasheet

GSMDC3960X MOSFET. Datasheet pdf. Equivalent

Part GSMDC3960X
Description N-Channel MOSFET
Feature GSMDC3960X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
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GSMDC3960X 30V N-Channel MOSFETs Product Description These GSMDC3960X Datasheet
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GSMDC3960X
GSMDC3960X
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 30V, 115A, RDS(ON)=2.4m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS guaranteed
„ Green Device Available
„ DFN5X6-8L package design
Applications
„ MB / VGA / Vcore
„ POL Applications
„ SMPS 2nd SR
Packages & Pin Assignments
GSMDC3960XFF (DFN5X6-8L)
Bottom View
Pin Description
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
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GSMDC3960X
Ordering Information
GS P/N
GSMDC3960X F F
Package Code
Pb Free Code
Part Number
GSMDC3960XFF
Package
DFN5X6-8L
Marking Information
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
TA=25
TA=100
IAS Single Pulse Avalanche Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
RθJC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
30
±20
115
72
460
180
60
135
1.08
-55 to +150
-55 to +150
62
0.92
Unit
V
V
A
A
mJ
A
W
W/
/W
/W
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