P-Channel MOSFET. GSM3911P Datasheet

GSM3911P MOSFET. Datasheet pdf. Equivalent

Part GSM3911P
Description P-Channel MOSFET
Feature GSM3911P 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field eff.
Manufacture Globaltech
Datasheet
Download GSM3911P Datasheet

GSM3911P 30V P-Channel MOSFETs Product Description These P- GSM3911P Datasheet
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GSM3911P
GSM3911P
30V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Packages & Pin Assignments
GSM3911PJZF (SOT-23)
Features
„ -30V, -4.1A, RDS(ON)=55m@VGS=-10V
„ Fast switching
„ Suit for -4.5V Gate Drive Applications
„ Green Device Available
„ SOT-23 package design
Applications
„ Notebook
„ Load Switch
„ Battery Protection
„ Hand-held Instruments
Top Views
Pin Description
1 Gate
2 Source
3 Drain
Ordering & Marking Information
GS P/N
GSM3911P JZ F
Package Code
Pb Free Code
Part Number
GSM3911PJZF
Package
SOT-23
Part Marking
HYWMM
Quantity
3000pcs
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GSM3911P
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient
Typical
-30
±20
-4.1
-2.6
-16.4
1.56
0.012
-55 to +150
-55 to +150
80
Unit
V
V
A
A
W
W/
/W
Electrical Characteristics
TA=25Unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Unit
Static
V(BR)DSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
VGS(th) Gate Threshold Voltage
VGS(th) VGS(th) Temperature Coefficient
VGS=0V,ID=-250uA
Reference to 25,
ID=-1mA
VDS=VGS,ID=-250uA
-30 V
-0.03
V/
-1.2 -1.6 -2.2 V
4
mV/
IGSS Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
VDS=0V,VGS=±20V
VDS=-30V,VGS=0V
VDS=-24V,VGS=0V,
TJ=125
±100
-1
-10
nA
uA
IS Continuous Source Current
ISM Pulsed Source Current
VG=VD=0V,
Force Current
-4.1
-16.4
A
RDS(on)
gFS
VSD
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=-10V,ID=-3A
VGS=-4.5V,ID=-2A
VDS=-10V,ID=-3A
VGS=0V,IS=-1A
Dynamic
45 55 m
67 85
3.5 S
-1 V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
tr
Turn-On Time
td(off)
tf
Turn-Off Time
VDS=-15V,VGS=-4.5V,
ID=-3A
VDS=-15V,VGS=0V,
f=1MHz
VDD=-15V,ID=-1A,
VGS=-10V,RG=6
5.1 7
2 3 nC
2.2 4
560 810
55 80 pF
40 60
3.4 6
10.8 21 ns
26.9 51
6.9 13
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