P-Channel MOSFET. GSMDD0903 Datasheet

GSMDD0903 MOSFET. Datasheet pdf. Equivalent

Part GSMDD0903
Description P-Channel MOSFET
Feature GSMDD0903 100V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
Download GSMDD0903 Datasheet

GSMDD0903 100V P-Channel MOSFETs Product Description These GSMDD0903 Datasheet
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GSMDD0903
GSMDD0903
100V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ -100V, -10A, RDS(ON)=140m@VGS=-10V
„ VGS Guaranteed ±25V
„ Improved dv/dt capability
„ Fast switching
„ Green Device Available
„ TO-252-2L package design
Applications
„ Networking
„ Load Switch
„ LED applications
Packages & Pin Assignments
GSMDD0903DF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMDD0903
Ordering Information
GS P/N
GSMDD0903 D F
Package Code
Pb Free Code
Part Number
GSMDD0903DF
Package
TO-252-2L
Marking Information
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate –Source Voltage
ID Continuous Drain Current
TC=25
TC=100
IDM Pulsed Drain Current
PD Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
RθJC
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
-100
±25
-10
-6.5
-40
88
0.59
-55 to +150
-55 to +150
62
1.7
Unit
V
V
A
A
W
W/
/W
/W
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