P-Channel MOSFET. GSMDC3907Z Datasheet

GSMDC3907Z MOSFET. Datasheet pdf. Equivalent

Part GSMDC3907Z
Description P-Channel MOSFET
Feature GSMDC3907Z 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mo.
Manufacture Globaltech
Datasheet
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GSMDC3907Z 30V P-Channel Enhancement Mode MOSFET Product De GSMDC3907Z Datasheet
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GSMDC3907Z
GSMDC3907Z
30V P-Channel Enhancement Mode MOSFET
Product Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Packages & Pin Assignments
GSMDC3907ZFF (DFN3X3-8L)
Features
„ -30V, -30A, RDS(ON)=17m@VGS=-10V
„ Super high density cell design for extremely
low RDS (ON)
„ Exceptional on-resistance and maximum DC
current capability
„ Suit for -4.5V Gate Drive Applications
„ DFN3X3-8L package design
Applications
„ MB / VGA / Vcore
„ POL Applications
„ Load Switch
„ LED Application
Pin No
1,2,3
4
5,6,7,8
Top View
Symbol
S
Description
Source
G Gate
D Drain
Ordering & Marking Information
GS P/N
GSMDC3907Z F F
Package Code
Pb Free Code
Part Number
Package
Quantity
GSMDC3907ZFF
DFN3X3-8L
3000pcs
*YW – Date Code , MMMM – GS ID Code
*Y=Year (Ex. 2012=Y=C or D ; 2013=Y=E or F ; 2014=Y=G or H ; …)
*W=Week (Ex. 1st, 2nd =A ; 3rd, 4th =B ; 5th, 6th =C ; … ; 47th, 48th =X ; 49th, 50th =Y ; 51st, 52nd =Z)
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GSMDC3907Z
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=70
IDM Pulsed Drain Current
Power Dissipation
PD Power Dissipation-Derate above 25
TJ Operating Junction Temperature Range
TSTG
RθJA
RθJC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
-30
±20
-30
-19
-120
27
0.22
-55 to +150
-55 to +150
62
4.6
Unit
V
V
A
A
W
W/
/W
/W
Electrical Characteristics
TA=25Unless otherwise noted
Symbol
Parameter
Conditions
V(BR)DSS
VGS(th)
VGS(th)
IGSS
IDSS
IS
ISM
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Continuous Source Current
Pulsed Source Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=-30V,VGS=0V
VDS=-24V,VGS=0V
TJ=125
VG=VD=0V,Force
Current
VGS =-10V,ID=-8A
VGS =-4.5V,ID=-6A
VDS=-10V,ID=-8A
IS=-1A,VGS=0V
Dynamic
VDS=-15V,VGS=-4.5V,
ID=-5A
VDS=-15V,VGS=0V,
f=1MHz
Turn-On Time
Turn-Off Time
VDD=-15V,ID=-1A,
VGS=-10V,RG=6
Min Typ Max Unit
-30
-1.2 -1.6 -2.5
V
4 mV/
±100 nA
-1
uA
-10
-30
-60
13.5 17
23 28
6.8
-1
A
A
m
S
V
11
3.4
4.2
1250
160
90
5.8
18.8
46.9
12.3
17
6
8
2500
320
180
11
36
90
23
nC
pF
ns
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