N-Channel MOSFET. GSM2220Y Datasheet

GSM2220Y MOSFET. Datasheet pdf. Equivalent

Part GSM2220Y
Description Dual N-Channel MOSFET
Feature GSM2220Y 20V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power.
Manufacture Globaltech
Datasheet
Download GSM2220Y Datasheet

GSM2220Y 20V Dual N-Channel MOSFETs Product Description The GSM2220Y Datasheet
Recommendation Recommendation Datasheet GSM2220Y Datasheet





GSM2220Y
GSM2220Y
20V Dual N-Channel MOSFETs
Product Description
These Dual N-Channel enhancement mode power
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Packages & Pin Assignments
GSM2220YX7F (SOT-563)
Features
„ 20V, 800mA, RDS(ON)=300m@VGS=4.5V
„ Fast switching
„ Suit for 1.5V Gate Drive Applications
„ Green Device Available
„ SOT-563 package design
Applications
„ Notebook
„ Load Switch
„ Networking
„ Hand-Held Instruments
Top Views
Pin Description Pin
1 Source 1 4
2 Gate 1 5
3 Drain 2 6
Description
Source 2
Gate 2
Drain 1
Ordering & Marking Information
Part Number
GSM2220YX7F
Package
SOT-563
Part Marking
CYM
Quantity
3000pcs
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GSM2220Y
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TC=25
TC=100
IDM Pulsed Drain Current
PD Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient
Typical
20
±8
800
510
3.2
312
2.5
-55 to +150
-55 to +150
400
Unit
V
V
mA
A
mW
mW/
/W
Electrical Characteristics
TJ=25Unless otherwise noted
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
VGS(th)
VGS(th)
IGSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Gate Leakage Current
IDSS Drain Current Leakage Current
IS Continuous Source Current
ISM Pulsed Source Current
RDS(on)
Drain-Source On-Resistance
VSD Diode Forward Voltage
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise TIme
td(off) Turn-Off Delay Time
tf Fall Time
Conditions
Static
VGS=0V,ID=250uA
Reference to 25,
ID=1mA
VDS=VGS,ID=250uA
VDS=0V,VGS=±6V
VDS=20V,VGS=0V
VDS=16V,VGS=0V,
TJ=125
VG=VD=0V,
Force Current
VGS=4.5V,ID=0.5A
VGS=2.5V,ID=0.4A
VGS=1.8V,ID=0.2A
VGS=1.5V,ID=0.1A
VGS=1.2V,ID=0.1A
VGS=0V,IS=0.2A
Dynamic
VDS=10V,VGS=4.5V,
ID=0.5A
VDS=10V,VGS=0V,
F=1MHz
VDD=10V,ID=0.5A,
VGS=4.5V,RG=10
Min Typ Max Unit
20
-0.01
V
V/
0.3 0.6 1.0 V
3 mV/
±20 uA
1
uA
10
0.8
A
1.6
200 300
235 400
295 550 m
365 800
600 1500
1V
12
0.26 0.5 nC
0.2 0.4
38.2 75
14.4 28 pF
6 12
5 10
3.5 7 ns
14 28
6 12
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