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GSMDS3810

Globaltech
Part Number GSMDS3810
Manufacturer Globaltech
Description Dual N-Channel MOSFET
Published Sep 9, 2018
Detailed Description GSMDS3810 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect trans...
Datasheet PDF File GSMDS3810 PDF File

GSMDS3810
GSMDS3810

Overview
GSMDS3810 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features „ 30V, 10A, RDS(ON)=13mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS Guaranteed „ Green Device Available „ SOP-8 package design Applications „ MB / VGA / Vcore „ POL Applications „ SMPS 2nd SR Packages & Pin Assignments GSMDS3810SF...


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