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GSMDC3812V

Globaltech
Part Number GSMDC3812V
Manufacturer Globaltech
Description Dual N-Channel MOSFET
Published Sep 9, 2018
Detailed Description GSMDC3812V 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect tran...
Datasheet PDF File GSMDC3812V PDF File

GSMDC3812V
GSMDC3812V

Overview
GSMDC3812V 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features „ 30V, 20A, RDS(ON)=20mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN3X3-8L package design Applications „ MB / VGA / Vcore „ POL Applications „ SMPS 2nd SR „ Li-Battery Protection Packages ...


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