Power MOSFET. GSMDC3801R Datasheet

GSMDC3801R MOSFET. Datasheet pdf. Equivalent

Part GSMDC3801R
Description N-Channel Power MOSFET
Feature GSMDC3801R 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
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GSMDC3801R 30V N-Channel MOSFETs Product Description These GSMDC3801R Datasheet
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GSMDC3801R
GSMDC3801R
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 30V, 55A, RDS(ON)=9m@VGS=10V (Q1)
„ 30V, 80A, RDS(ON)=6m@VGS=10V (Q2)
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS guaranteed
„ Green Device Available
„ DFN5X6-8L package design
Applications
„ MB / VGA / Vcore
„ POL Buck Applications
„ SMPS 2nd SR
Packages & Pin Assignments
GSMDC3801RFF (DFN5X6-8L)
Bottom View
Pin Description
1 Gate 1
2 Drain 1
3 Drain 1
4 Drain 1
5 Source 2
6 Source 2
7 Source 2
8 Gate 2
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GSMDC3801R
Ordering Information
GS P/N
GSMDC3801R F F
Package Code
Pb Free Code
Part Number
GSMDC3801RFF
Package
DFN5X6-8L
Marking Information
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,
Chip/Package Limit
TA=25
TA=100
Pulsed Drain Current, Chip/Package Limit
Single Pulse Avalanche Energy
IAS Single Pulse Avalanche Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
RθJC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Q1 Q2
30 30
±20 ±20
55/10
80/15
35/6 51/9
220/40
320/60
45 88
30 42
40 54
0.32 0.43
-55 to +150
-55 to +150
62 62
3.1 2.3
Unit
V
V
A
A
mJ
A
W
W/
/W
/W
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