P-Channel MOSFET. GSM2219Y Datasheet

GSM2219Y MOSFET. Datasheet pdf. Equivalent

Part GSM2219Y
Description Dual P-Channel MOSFET
Feature GSM2219Y 20V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power.
Manufacture Globaltech
Datasheet
Download GSM2219Y Datasheet

GSM2219Y 20V Dual P-Channel MOSFETs Product Description The GSM2219Y Datasheet
Recommendation Recommendation Datasheet GSM2219Y Datasheet





GSM2219Y
GSM2219Y
20V Dual P-Channel MOSFETs
Product Description
These Dual P-Channel enhancement mode power
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Packages & Pin Assignments
GSM2219YX7F (SOT-563)
Features
„ -20V, -400mA, RDS(ON)=600m@VGS=-4.5V
„ Fast switching
„ Suit for -1.5V Gate Drive Applications
„ Green Device Available
„ SOT-563 package design
Applications
„ Notebook
„ Load Switch
„ Networking
„ Hand-Held Instruments
Top Views
Pin Description Pin
1 Source 1 4
Description
Source 2
2 Gate 1 5
3 Drain 2 6
Gate 2
Drain 1
Ordering Information
GS P/N
GSM2219Y X7 F
Package Code
Pb Free Code
Part Number
GSM2219YX7F
Package
SOT-563
Part Marking
EYM
Quantity
3000pcs
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GSM2219Y
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TC=25
TC=100
IDM Pulsed Drain Current
PD Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient
Typical
-20
±8
-400
-250
-1.6
312
2.5
-55 to +150
-55 to +150
400
Unit
V
V
mA
A
mW
mW/
/W
Electrical Characteristics
TJ=25Unless otherwise noted
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
VGS(th)
VGS(th)
IGSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Gate-Source Leakage Current
IDSS Drain-Source Leakage Current
IS Continuous Source Current
ISM Pulsed Source Current
RDS(on)
Static Drain-Source On-Resistance
VSD Diode Forward Voltage
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Conditions
Static
VGS=0V,ID=-250uA
Reference to 25,
ID=-1mA
VGS=VDS,ID=-250uA
VDS=0V,VGS=±8V
VDS=-20V,VGS=0V
VDS=-16V,VGS=0V,
TJ=125
VG=VD=0V,
Force Current
VGS=-4.5V,ID=-0.3A
VGS=-2.5V,ID=-0.2A
VGS=-1.8V,ID=-0.1A
VGS=-1.5V,ID=-0.1A
VGS=-1.2V,ID=-0.1A
VGS=0V,IS=-0.2A
Dynamic
VDS=-10V,VGS=-4.5V,
ID=-0.2A
VDS=-10V,VGS=0V,
F=1MHz
VDD=-10V,ID=-0.2A,
VGS=-4.5V,RG=10
Min Typ Max Unit
-20 V
-0.01
V/
-0.3 -0.6 -1.0 V
3 mV/
±20 uA
-1
uA
-10
440
610
810
1020
1800
-0.4
-0.8
600
850
1200
1600
3000
-1
A
m
V
12
0.28 0.5 nC
0.18 0.4
40 78
15 30 pF
6.5 13
8 16
5.2 10 ns
30 60
18 36
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