P-Channel MOSFET. GSM4948W Datasheet

GSM4948W MOSFET. Datasheet pdf. Equivalent

Part GSM4948W
Description P-Channel MOSFET
Feature GSM4948W 60V P-Channel Enhancement Mode MOSFET Product Description GSM4948W, P-Channel enhancement .
Manufacture Globaltech
Datasheet
Download GSM4948W Datasheet

GSM4948W 60V P-Channel Enhancement Mode MOSFET Product Desc GSM4948W Datasheet
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GSM4948W
GSM4948W
60V P-Channel Enhancement Mode MOSFET
Product Description
GSM4948W, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power
loss are needed in commercial industrial surface
mount applications.
Packages & Pin Assignments
GSM4948WSF(SOP-8)
Features
„ -60V/-4.0A,RDS(ON)=100m@VGS=-10V
„ -60V/-3.0A,RDS(ON)=112m@VGS=-4.5V
„ Super high density cell design for extremely
low RDS (ON)
„ SOP-8 package design
Applications
„ Backlight Inverter for LCD Display
„ Full Bridge DC/DC Converter
„ Load Switch
„ CCFL Inverter
Pin Description Pin Description
1 Source 1 5
Drain 2
2 Gate 1 6 Drain 2
3 Source 2 7
Drain 1
4 Gate 2 8 Drain 1
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GSM4948W
Ordering Information
GS P/N
GSM4948W S F
Package Code
Halogen Free/
Pb Free Code
Part Number
GSM4948WSF
Package
SOP-8
Quantity Reel
2500 PCS
Marking Information
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TJ=150ºC)
Pulsed Drain Current
TA=25ºC
TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25ºC
TA=70ºC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
-60
±20
-4.0
-3.0
-20
-1.7
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
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