MOSFET. GSM4599C Datasheet

GSM4599C MOSFET. Datasheet pdf. Equivalent

Part GSM4599C
Description MOSFET
Feature GSM4599C 60V N & P Pair Enhancement Mode MOSFET Product Description These miniature surface mount M.
Manufacture Globaltech
Datasheet
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GSM4599C 60V N & P Pair Enhancement Mode MOSFET Product Des GSM4599C Datasheet
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GSM4599C
GSM4599C
60V N & P Pair Enhancement Mode MOSFET
Product Description
These miniature surface mount MOSFETs utilize
High Cell Density process. Low RDS(ON) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
Typical applications are PWM DC-DC converters,
power management in portable and battery
powered products such as computers, printers,
battery charger, telecommunication power system,
and telephones power system.
Packages & Pin Assignments
GSM4599CSF (SOP-8)
Features
N-Channel
„ 60V, 4.5A, RDS(ON)=58m@VGS=10V
„ 60V, 4.0A, RDS(ON)=85m@VGS=4.5V
P-Channel
„ -60V, -3.5A, RDS(ON)=90m@VGS=-10V
„ -60V, -3.0A, RDS(ON)=135m@VGS=-4.5V
„ Fast switching speed
„ SOP-8 package design
Applications
„ Power Management in Note
„ Portable Equipment / LCD Display inverter
„ Battery Powered System / Load Switch
Pin Description Pin Description
1
Source1
5
Drain2
2 Gate1 6 Drain2
3
Source2
7
Drain1
4 Gate2 8 Drain1
Ordering & Marking Information
GS P/N
GSM4599C S F
Package Code
Halogen Free/
Pb Free Code
Part Number
GSM4599CSF
Package
SOP-8
Quantity Reel
4000 PCS
www.gs-power.com 1



GSM4599C
Absolute Maximum Ratings (N-Channel)
(TA=25ºC unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current (*1)
TA=25ºC
TA=70ºC
IDM Pulsed Drain Current (*2)
IS Continuous Source Current (Diode Conduction) (*1)
PD Power Dissipation (*1)
TA=25ºC
TA=70ºC
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient (*1)
Note 1: Surface Mounted on 1” x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature.
Typical
60
±20
4.5
4
20
1.3
2
1.3
-55 to 150
-55 to 150
62.5
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
Electrical Characteristics (N-Channel)
(TA=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Static
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current (*3)
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=48V,VGS=0V
VDS5V,VGS=10V
RDS(on)
gFS
Drain-Source On-Resistance (*3)
Forward Transconductance (*3)
VGS=10V,ID=4.5A
VGS=4.5V,ID=4A
VDS=10V,ID=4.5A
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Tr
Turn-On Time
td(off)
Tf
Turn-Off Time
Note 3: Pulse test: PW300usec, duty cycle2%.
VDS=0.5V(BR)DSS,
VGS=10V,ID=4.5A
VDD=30V,
ID=1A,VGS=10V,
RG=6
Min Typ Max
60
1 1.5 2.5
±100
1
20
40 58
55 85
14
12
2.4
2.6
11
8
19
6
Unit
V
nA
uA
A
m
S
nC
ns
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