temperature Triacs. AIS30CH60H Datasheet

AIS30CH60H Triacs. Datasheet pdf. Equivalent

Part AIS30CH60H
Description 3 Quadrants High temperature Triacs
Feature   ADV                                                                          AIS30CH60H/80H 3 Quad.
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Datasheet
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  ADV                                                        AIS30CH60H Datasheet
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AIS30CH60H
 
ADV 
                                                                        AIS30CH60H/80H
3 Quadrants High temperature Triacs
General Description
High current density due to mesa technology , guaranteed maximum
junction temperature 150° C. The AIS30CH triac series is suitable for
general purpose AC switching. They can beused as an ON/OFF function
in applications such as static relays, heating regulation, High power motor
controls e.g. washing machines and vacuum cleaners,Rectifier-fed DC
inductive loads e.g.DC motors and solenoids , motor speed controllers.
The heatsink can be reduced,compared to traditional triacs, according to
the high performance at given junction temperatures.
Features
Repetitive Peak Off-State Voltage: 600V/800V
R.M.S On-State Current ( IT(RMS)= 30A )
High Commutation dv/dt
High junction temperature operating capability
These Devices are Pb-Free and are RoHS Compliant
Isolated heatsink mounted , Isolation Voltage ( VISO = 2500V AC )
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 95°C
Conditions
AIS30CH60H
AIS30CH80H
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 150°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 150°C
Average Gate Power Dissipation(Tj=150°C)
Peak Gate Power Dissipation(tp=20us,Tj=150°C)
Operating Junction Temperature
Storage Temperature
2.T2
3.Gate
1.T1
1 23
Ratings
600
800
30
270/285
488
50
4
1
10
- 40 ~ 150
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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Feb,2013 -Rev.3.02



AIS30CH60H
 
ADV 
                                                                        AIS30CH60H/80H
Electrical Characteristics( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
Q1-Q2-Q3 Gate Trigger Voltage
Q1-Q2-Q3 Gate Trigger Current
Q1-Q2-Q3
Holding Current
Q1-Q3
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Change of
Commutating Voltage
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 150°C
ITM = 42A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 150°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 150°C
VD=400V Tj = 150°C
(dI/dt)c=-16A/ms
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
AIS30CH60H/80H
S Blank B
10
8.5
1.5
Unit
uA
mA
V
0.15 V
1.3 V
10 35 50 mA
20 50 75 mA
20 80 90
mA
35 90 110
500
1000
1500 V/μs
1 15 20 V/μs
0.9 °C/W
50 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
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Feb,2013 -Rev.3.02





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