power switch. AACT110 Datasheet

AACT110 switch. Datasheet pdf. Equivalent

Part AACT110
Description AC Thyristor Triac power switch
Feature   A  DV AC Thyristor Triac power switch General Description Sensitive gate triac in the TO-92 plasti.
Manufacture ADV
Datasheet
Download AACT110 Datasheet

  A  DV AC Thyristor Triac power switch General Description AACT110 Datasheet
  A  DV AC Thyristor Triac power switch AACT108W/10W Gener AACT110W Datasheet
Recommendation Recommendation Datasheet AACT110 Datasheet





AACT110
 
A  DV
AC Thyristor Triac power switch
General Description
Sensitive gate triac in the TO-92 plastic package, intended
for use in AC static switching and industrial control systems,
driving low power highly inductive loads like solenoid,pump,
fan,and micro-motor.
Features
Repetitive Peak Off-State Voltage: 800Vand1000V
R.M.S On-State Current ( IT(RMS)=1A )
Very high immunity to false turn-on by dV/dt
Triggering in three quadrants only
Pin compatible with standard triacs
Safe clamping capability for low energy over-voltage transients
These Devices are Pb-Free and are RoHS Compliant
AACT108/10
2.T2
3.Gate
1.T1
1 32
TO-92
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC =57 °C
Conditions
AACT108
AACT110
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
800
1000
1
12/12.8
1.12
50
1
0.1
1
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
1/6
www.advsemi.com
ADV
Scan the QR code to view the latest product information
Feb,2013 -Rev.3.01



AACT110
 
A  DV
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
AACT108/10
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 1.4A, tp = 380 μs
VD = 2/3VDRM RL = 3.3 k
Tj = 125°C
Q1-Q2-Q3
Q1-Q2-Q3
Gate Trigger Voltage
Gate Trigger Current
VD = 12V RL = 33
Q1-Q2-Q3
Holding Current
IT = 0.1A
Q1-Q3
Q2
Latching Current
IG = 1.2 IGT
Critical Rate of Rise of Off-State
Voltage
VD = 2/3VDRM gate open
Tj = 125°C
Junction to case (AC)
Junction to ambient(Copper surface under tab:S=5cm2)
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Max.
Max.
AACT108/10
10
0.5
1.5
0.2
1.3
10
10
25
35
600
60
150
Unit
uA
mA
V
V
V
mA
mA
mA
V/μs
°C/W
°C/W
FIG.1:Quadrant are defined and the gate trigger test circuit
Q2(T2+G-)
RL
T2+
RL
Q1(T2+G+)
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
2/6
www.advsemi.com
Feb,2013 -Rev.3.01





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)