Effect Transistor. ADM15P06E Datasheet

ADM15P06E Transistor. Datasheet pdf. Equivalent

Part ADM15P06E
Description P-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM15P06E  P-Channel Logic Level Enhancement Mode Field Effect Tra.
Manufacture ADV
Datasheet
Download ADM15P06E Datasheet

                        ADV     ADM15P06E  P-Channel Logic ADM15P06E Datasheet
Recommendation Recommendation Datasheet ADM15P06E Datasheet





ADM15P06E
                       
ADV  
 
ADM15P06E 
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
-60V
ID
-15A
RDS(ON) (mΩ)
90mΩ
TO-252
2
1 
2 
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Thermal Characteristics
Symbol
Parameter
RthJC Thermal resistance junction-case max
RthJA Thermal resistance junction-ambient max
1. Pulse width limited by maximum junction temperature.
Ratings
-60
±20
150
-55 to 150
-15
-50
-15
-10
41
16
Ratings
3
75
Unit
V
°C
°C
A
A
A
A
W
W
Unit
°C/W
°C/W
 
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Ver.0.12



ADM15P06E
                       
ADV  
 
ADM15P06E 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
RDS(ON)
Drain-SourceOn-stateResistance
gFS Forward transconductance
VGS=0V, IDS=-250uA
VDS= -48V, VGS=0V
VDS=-40V,VGS=0V TJ=125°C
VDS=VGS, IDS=-250uA
VGS=±20V, VDS=0V
VGS= -10V, IDS=-7A
VGS= -4.5V, IDS=-6A
VDS=- 10V, IDS=-7A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= -25V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS =-20V,
ID= -1A, VGS= -10V,
RGEN=6Ω 
VDS=0.5V, VGS= -10V,
IDS=-7A
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
NOTES:
1. Independent of operating temperature.
ISD = -7A, VGS = 0
ISD=-7A, dlSD/dt=100A/s
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
Min.
-60
--
--
-1
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- --
-- 1
-- 10
-1.7 -3
-- ±250
42 55
100 135
9 --
V
uA
V
nA
m
S
1130
--
122 -- pF
75 --
7 --
10 --
ns
19 --
12 --
12.5 --
1.8 -- nC
3.7 --
-- -1 V
37 -- ns
53 -- nC
 
2/5
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Ver.0.12





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