Effect Transistor. ADM26N60F Datasheet

ADM26N60F Transistor. Datasheet pdf. Equivalent

Part ADM26N60F
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM26N60F  N-Channel Enhancement Mode Field Effect Transistor PRO.
Manufacture ADV
Datasheet
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ADM26N60F
                       
ADV  
 
ADM26N60F 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
600V
ID
20A
RDS(ON) (mΩ)
135mΩ
TO220F
Features:
Low gate input resistance
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Lead-Free,RoHS Compliant
1 
2 
3 
Description:
The ADM26N60F series MOSFETs is a new technology, which combines an innovative super junction technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity,
superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
Power Dissipation
PD
Derating factor
TC=25°C
TC=25°C
TC=100°C
TC=25°C
1. Pulse width limited by maximum junction temperature.
Ratings
600
±30
150
-55 to 150
20
80
20
13
35
0.28
Unit
V
°C
°C
A
A
A
A
W
W/°C
Thermal Characteristics
Symbol
Parameter
RthJC
RthJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Ratings
3.6
62.5
Unit
°C/W
°C/W
 
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Ver.0.11



ADM26N60F
                       
ADV  
 
ADM26N60F 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
VGS=0V, IDS=1mA
VDS= 600V, VGS=0V
VDS=600V,VGS=0V
TJ=125°C
VDS=VGS, IDS=250uA
VGS=±30V, VDS=0V
VGS= 10V, IDS=13A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 50V,
Frequency=1MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=300V,
ID= 10A, VGS= 10V,
RGEN=4.7Ω
RL=30Ω 
VDS=480V, VGS= 10V,
IDS=20A
Diode Characteristics
VSD Diode Forward Voltage
ISD = 20A, VGS = 0
trr Reverse Recovery Time
qrr Reverse Recovery Charge
ISD=20A, dlSD/dt=100A/s
NOTES:
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
Min.
600
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2
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Typ. Max. Unit
-- --
-- 1
-- 50
34
-- ±100
135 165
V
uA
V
nA
m
1474
--
149 -- pF
4 --
15.2 --
18.2 --
ns
46.0 --
15.7 --
52.1 --
11.2 -- nC
24.9 --
0.87 1.3
V
370 -- ns
5 -- uC
 
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Ver.0.11





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