Effect Transistor. ADM28P10E Datasheet

ADM28P10E Transistor. Datasheet pdf. Equivalent

Part ADM28P10E
Description P-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM28P10E  P-Channel Logic Level Enhancement Mode Field Effect Tra.
Manufacture ADV
Datasheet
Download ADM28P10E Datasheet

                        ADV     ADM28P10E  P-Channel Logic ADM28P10E Datasheet
Recommendation Recommendation Datasheet ADM28P10E Datasheet





ADM28P10E
                       
ADV  
 
ADM28P10E 
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
-100V
ID
-28A
RDS(ON) (mΩ)
76mΩ
TO252
2
1 
2 
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Thermal Characteristics
Symbol
Parameter
RthJC Thermal resistance junction-case max
RthJA Thermal resistance junction-ambient max
1. Pulse width limited by maximum junction temperature.
Ratings
-100
±20
150
-55 to 150
-28
-120
-28
-16
150
110
Ratings
3
50
Unit
V
°C
°C
A
A
A
A
W
W
Unit
°C/W
°C/W
 
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ADM28P10E
                       
ADV  
 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)
Drain-SourceOn-stateResistance
VGS=0V, IDS=-250uA
VDS= -100V, VGS=0V
VDS=VGS, IDS=-250uA
VGS=±20V, VDS=0V
VGS= -10V, IDS=-15A
VGS= -4.5V, IDS=-8A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= -25V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS =-50V,
ID= -18A, VGS= -10V,
RGEN=3.3Ω 
VDS=-80V, VGS= -10V,
IDS=-18A
Diode Characteristics
VSD Diode Forward Voltage
ISD = -16A, VGS = 0
trr Reverse Recovery Time
qrr Reverse Recovery Charge
ISD=-16A, dlSD/dt=100A/s
NOTES:
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
ADM28P10E 
Min. Typ. Max. Unit
-100
--
-- V
-- -- -25 uA
-1 -- -3 V
-- -- ±100 nA
-- 63 76
-- 72 92 m
-- 2550 --
-- 345 -- pF
-- 70 --
-- 16 --
-- 7 --
ns
-- 120 --
-- 25 --
-- 78 --
-- 8 -- nC
-- 20 --
-- -- -1.2 V
-- 30
-- ns
-- 100 -- nC
 
2/5
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Ver.0.12





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