Effect Transistor. ADM45N06D Datasheet

ADM45N06D Transistor. Datasheet pdf. Equivalent

Part ADM45N06D
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM45N06D  N-Channel Enhancement Mode Field Effect Transistor PRO.
Manufacture ADV
Datasheet
Download ADM45N06D Datasheet

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ADM45N06D
                       
ADV  
 
ADM45N06D 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
ID
40A
RDS(ON) (mΩ)
18mΩ
TO251
2
1 23
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
TC=25°C
ID Continuous Drain Current
TC=25°C
PD Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.
TC=25°C
Thermal Characteristics
Symbol
Parameter
RthJC
RthJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Ratings
60
±20
150
-55 to 175
40
90
40
20
Ratings
2.0
40
Unit
V
°C
°C
A
A
A
W
Unit
°C/W
°C/W
 
1/4
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Ver.0.10



ADM45N06D
                       
ADV  
 
ADM45N06D 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
gFS
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
Forward transconductance
VGS=0V, IDS=250uA
VDS= 48V, VGS=0V
VDS=48V, VGS=0V TJ=85°C
VDS=VGS, IDS=250uA
VGS=±20V, VDS=0V
VGS= 10V, IDS=15A
VDS= 10V, IDS=15A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 25V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=30V,
ID= 5A, VGS= 10V,
RGEN=3Ω 
VDS=30V, VGS= 10V,
IDS=12A
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
NOTES:
ISD = 1A, VGS = 0
ISD=15A, dlSD/dt=50A/s
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
Min.
60
--
--
1
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
--
--
--
--
--
16.0
14
--
1
5
4
±100
18.0
--
V
uA
V
nA
m
S
540 --
74 -- pF
34 --
6 --
4.6 --
ns
22 --
4 --
9 --
1.6 -- nC
1.8 --
-- 1.2 V
42.0 -- ns
31.0 -- nC
 
2/4
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Ver.0.10





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