Effect Transistor. ADM250N04 Datasheet

ADM250N04 Transistor. Datasheet pdf. Equivalent

Part ADM250N04
Description N-Channel Enhancement Mode Field Effect Transistor
Feature .
Manufacture ADV
Datasheet
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ADM250N04 Datasheet
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ADM250N04
                       
ADV  
 
ADM250N04 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
40V
ID
252A
RDS(ON) (mΩ)
2.0mΩ
TO220C
Features:
Low Gate Charge for Fast Switching Application
Low RDS(ON) to Minimize Conductive Loss
100% EAS Guaranteed
Optimized V(BR)DSS Ruggedness
Lead-Free,RoHS Compliant
1 
2 
3 
Description:
The ADM250N04 series MOSFETs is a new technology, which combines an innovative super junction technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity,
superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC =25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested2
ID Continuous Drain Current1
PD Maximum Power Dissipation
TC=25°C
Silicon Limited
Package Limited
TC=25°C
Ratings
40
±20
175
-55 to 175
252
1009
252
80
242
Unit
V
°C
°C
A
A
A
A
W
Thermal Characteristics
Symbol
RthJC
RthJA
Parameter
Thermal resistance junction-case max1
Thermal resistance junction-ambient max1
 
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Ratings
0.62
62
Unit
°C/W
°C/W
Feb,2013 -Rev.3.02



ADM250N04
                       
ADV  
 
ADM250N04 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
V(BR)DSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250uA
VDS=32V,VGS=0V ,TJ=25°C
IDSS
Zero Gate Voltage Drain Current
VDS=32V,VGS=0V ,
TJ=125°C
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250uA
IGSS
RDS(ON)
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-SourceOn-stateResistance2VGS= 10V, IDS=80A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=20V,
Frequency=1MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=20V,
ID= 40A, VGS= 10V,
RGEN=10Ω
 
VDS=20V, VGS= 10V,
IDS=80A
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy3
VDD=20V,L=1mH ,VGS=10V
,Rg=25Ω
Diode Characteristics
VSD Diode Forward Voltage2
trr Reverse Recovery Time
qrr Reverse Recovery Charge
ISD = 80A, VGS = 0
ISD=80A, dlSD/dt=100A/s
NOTES:
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The Min. value is 100% EAS tested guarantee.
Min.
40
--
--
2
--
--
--
--
--
--
--
--
--
--
--
--
200
--
--
--
Typ. Max.
-- --
-- 1
-- 100
4
-- ±100
1.6 2.0
8187.6
1182.8
651.6
--
--
--
30.7
81.1
185.7
91.3
136.3
36
23.4
--
--
--
--
--
--
--
-- --
-- 1.2
69.3 --
66.2 --
Unit
V
uA
V
nA
m
pF
ns
nC
mJ
V
ns
nC
 
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www.advsemi.com
Feb,2013 -Rev.3.02





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