Effect Transistor. ADM2300 Datasheet

ADM2300 Transistor. Datasheet pdf. Equivalent

Part ADM2300
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM2300  N-Channel Enhancement Mode Field Effect Transistor PRODU.
Manufacture ADV
Datasheet
Download ADM2300 Datasheet

                        ADV     ADM2300  N-Channel Enhance ADM2300 Datasheet
Recommendation Recommendation Datasheet ADM2300 Datasheet





ADM2300
                       
ADV  
 
ADM2300 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
20V
ID
4.2A
RDS(ON) (mΩ)
18mΩ
SOT-23
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current(3)
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
TC=25°C
TC=25°C
TC=125°C
PD Maximum Power Dissipation3
1. Pulse width limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RthJA Thermal resistance junction-ambient max(3)
Ratings
20
±12
125
-55 to 150
1.25
12
4.6
4.2
1.25
Ratings
100
Unit
V
°C
°C
A
A
A
A
W
Unit
°C/W
 
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ADM2300
                       
ADV  
 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
VGS=0V, IDS=250uA
VDS= 16V, VGS=0V
VDS=16V, VGS=0V TJ=55°C
VDS=VGS, IDS=250uA
VGS=±8V, VDS=0V
VGS= 10V, IDS=2.8A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 10V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=10V,
ID= 3.6A, VGS= 4.5V,
RGEN=10Ω 
VDS=10V, VGS= 4.5V,
IDS=1A
Diode Characteristics
VSD Diode Forward Voltage
NOTES:
ISD = 1.25A, VGS = 0
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
3. Surface Mounted on FR4 Board, t < 10 sec.
ADM2300 
Min. Typ. Max. Unit
20 --
-- V
-- -- 1
uA
-- -- 10
0.5 0.8 1.5 V
-- -- ±100 nA
-- 18 21 m
-- 608 --
-- 115 -- pF
-- 86 --
-- 10 --
-- 14 --
ns
-- 39 --
-- 26 --
-- 9.2 --
-- 1.6 -- nC
-- 2.6 --
-- 0.84 1.3 V
 
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