Power Thyristor. PSTN3476TD420 Datasheet 


Technical Data :
Page 1 of 3
P S T N 3 4 7 6 T D 4 2 0  Power Thyristor
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HIGH POWER THYRISTOR FOR PHASE CONTROL
4200 VDRM;
APPLICATIONS
Features:
. All Diffused Structure
. Linear Amplifying Gate Configuration
. Blocking capabilty up to 4200 volts
. Guaranteed Maximum TurnOff Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking  Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
N3476TD420
4200
4200
4300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
250 mA (3)
1000 V/µsec
Conducting  on state
Parameter
Average value of onstate current
RMS value of onstate current
Peak one cpstcle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak onstate voltage
Critical rate of rise of onstate
current (5, 6)
Critical rate of rise of onstate
current (6)
Symbol Min. Max.
Typ.
IT(AV)
3400
ITRMS
5338
ITSM 46800
I2t 10.9x106
IL
400
IH
100
VTM
2.28
di/dt
200
di/dt
100
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Nonrepetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS397, Section
5226. The value defined would be in addi
tion to that obtained from a snubber circuit,
comprising a 0.2 µF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Units
A
A
Conditions
Sinewave,180o conduction,TS=55oC
Nominal value
10.0 msec (50Hz), sinusoidal wave
A shape, 180o conduction, Tj = 125 oC
A2s 10.0 msec
mA VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V
A/µs
A/µs
ITM = 5000 A; Duty cpstcle ≤ 0.01%
Tj = 125 oC
Switching from VDRM ≤ 1000 V,
nonrepetitive
Switching from VDRM ≤ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS
Thyristor
Technical Data :
Page 2 of 3
PSTN3476TD420  Power
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
15
300
200
125
5
4
0.30
Peak negative voltage
VGRM
15
A
mA VD = 6 V;RL = 3 ohms;Tj = 40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = 40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turnoff time (with VR = 50 V)
Reverse recovery current
Symbol Min.
td
tq
Irr
Max. Typ. Units
2.5 µs
3.0
250 µs
400
A
200
Conditions
ITM = 50 A; VD = 1500 V
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 µs; tp = 20 µs
ITM > 2000 A; di/dt = 10 A/µs;
VR ≥ 50 V; Reapplied dV/dt = 20
V/µs linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cpstcle ≥ 0.01%
ITM > 2000 A; di/dt = 10 A/µs;
VR ≥ 50 V
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance  junction to
case
Thermal resistamce  case to sink
Mounting force
Weight
Symbol Min. Max. Typ.
Tj 40 +125
Tstg 40 +150
Units
oC
oC
Conditions
RΘ (jc)
RΘ (cs)
P
W
0.012
0.002
8000 10000
35.5 44.4
oC/W
oC/W
lb.
kN
Double sided cooled
Single sided cooled
Double sided cooled *
Single sided cooled *
1.5 Kg.
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data

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