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CONDUCTING THYRISTORS. CSR328-11 Datasheet

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CONDUCTING THYRISTORS. CSR328-11 Datasheet






CSR328-11 THYRISTORS. Datasheet pdf. Equivalent




CSR328-11 THYRISTORS. Datasheet pdf. Equivalent





Part

CSR328-11

Description

REVERSE CONDUCTING THYRISTORS



Feature


Technical Data : KN-002 CSR328-11~13ib F ast Switching Reverse-conducting Thyris tor 1100~1300 VDRM; 630 A rms ********* *************************************** *************************************** ******************* RCT FOR INVERTER AN D CHOPPER APPLICATIONS Features: . Al l Diffused Structure . Interdigitated A mplifying Gate Configuration . Blocking capabilty up to 1.
Manufacture

PST

Datasheet
Download CSR328-11 Datasheet


PST CSR328-11

CSR328-11; 300 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERI STICS AND RATINGS Blocking - Off State Device Type VDRM (1) VDSM (1) CSR328 -11 1100 1100 CSR328-12 1200 1200 CSR328-13 1300 1300 VDRM = Repetiti ve peak off state voltage Notes: All r atings are specified for Tj=25 oC unles s otherwise stated.


PST CSR328-11

. (1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal wa veform over the temperature range -40 t o +125 oC. (2) 10 msec. max. pulse widt h (3) Maximum value for Tj = 125 oC. (4 ) Minimum value for linear and exponent ial waveshape to 80% rate .


PST CSR328-11

.

Part

CSR328-11

Description

REVERSE CONDUCTING THYRISTORS



Feature


Technical Data : KN-002 CSR328-11~13ib F ast Switching Reverse-conducting Thyris tor 1100~1300 VDRM; 630 A rms ********* *************************************** *************************************** ******************* RCT FOR INVERTER AN D CHOPPER APPLICATIONS Features: . Al l Diffused Structure . Interdigitated A mplifying Gate Configuration . Blocking capabilty up to 1.
Manufacture

PST

Datasheet
Download CSR328-11 Datasheet




 CSR328-11
Technical Data : KN-002
CSR328-11~13ib Fast Switching Reverse-conducting Thyristor
1100~1300 VDRM; 630 A rms
**********************************************************************************************************
RCT FOR INVERTER AND CHOPPER APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 1300 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VDRM (1)
VDSM (1)
CSR328-11
1100
1100
CSR328-12
1200
1200
CSR328-13
1300
1300
VDRM = Repetitive peak off state voltage
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Repetitive peak off state
leakage
Critical rate of voltage rise
IDRM
dV/dt (4)
5 mA
40mA (3)
700 V/µsec
Conducting - on state
Parameter
RMS value of on-state current
Average on-state current
Symbol
ITRMS
IT(AV)
Peak one cycle surge on-state
current(non repetitive)
I square t
Peak on-state voltage
ITSM
I2t
VTM
Critical rate of rise of on-state
current
Average reverse current
di/dt
IR(AV)
RMS reverse currrnt
IR(RMS)
Peak reverse voltage
Peak one cycle surge reverse
current(non repetitive)
IR square t
VRM
IRSM
IR2t
Max. Typ. Units Conditions
630 A Nominal value
235
5600
5.5x105
2.5.
Continuous single-phase,half sine
A wave,180°conduction
50Hz, sinusoidal wave-
A shape, 180o conduction, Tj = 125 oC
A2s 8.3 msec and 10.0 msec
V ITM =1500A; Tj = 25 oC
200 A/µs VD=1/2VDRM,ITM=250A f=50HZ
IGM=1.5A,diG/dt=1.0A/us,Tj=125
240 A Continuous single-phase,half sine
wave,180°conduction
640 A
2.3
5600
5.5x105
V IRM=500A, Tj = 25 oC
50Hz, sinusoidal wave-
A shape, 180o conduction, Tj = 125 oC
A2s 8.3 msec and 10.0 msec




 CSR328-11
ELECTRICAL CHARACTERISTICS AND RATINGS (cont.)
Technical Data : KN-002
Page 2 of 3
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol
PGM
PG(AV)
Min.
Max. Typ.
16
8
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
5A
300 mA
VD = 6 V;RL = 2 ohms;Tj = +25 oC
3 V VD = 6 V;RL = 2 ohms;Tj = 25oC
Peak non- trigger voltage
VGD
0.2 V Tj = 125 oC;VD=1/2VDRM
Dynamic
Parameter
Turn-off time
Reverse recovery time
Symbol
tq
.
trr
Max. Typ.
15
2.7
Units
µs
µs
Conditions
ITM = 400 A; di1/dt = -50A/µs;
di2/dt=50A/us,IRM=10A; dV/dt =350
V/µs VDR=1250V
Tj = 125 oC;tw=60us
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+150
Typ.
Units
oC
oC
Conditions
Thyristor part thermal resistance - RΘ(j-C)
junction to fin
0.08 oC/W Double sided cooled
Diode part thermal resistamce –
junction to fin
RΘ(j-S)
0.005
oC/W Double sided cooled
Mounting force
P 16.7 kN
14.5
Weight
W
260 g
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data




 CSR328-11
CASE OUTLINE AND DIMENSIONS.
Technical Data :KN-002
Page 3 of 3
Reverse-conducting Thyristor
OUTLINE DIMENSIONS
DIMENSIONS
DIAN A
DIAN B
DIAN C
D
E1
E2
F
G
H
Min
mm
33.02
55.88
-----
0.76
25.40
15.24
3.30
1.78
-----
Max
mm
34.39
63.50
54.61
-----
27.18
17.24
3.81
2.03
36.2
Min
In
1.30
2.20
-----
0.03
1.00
0.60
0.13
0.07
----
Max
In
1.35
2.50
2.15
-----
1.07
0.68
0.15
0.08
1.43
Yangzhou Positioning Tech. Co., Ltd
Add:Room303 Weiheng Building No.20 B Area Lanyuan Wangyue Rd, Yangzhou
Jiangsu P.R.C 225000
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