PD57006-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is desig...
