NPN Phototransistor. BPW96B Datasheet

BPW96B Phototransistor. Datasheet pdf. Equivalent

Part BPW96B
Description Silicon NPN Phototransistor
Feature www.vishay.com BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor 94 8391 DESCRIPTI.
Manufacture Vishay
Datasheet
Download BPW96B Datasheet

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BPW96B
www.vishay.com
BPW96B, BPW96C
Vishay Semiconductors
Silicon NPN Phototransistor
94 8391
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW96B
BPW96C
Ica (mA)
2.5 to 7.5
4.5 to 15
Note
• Test condition see table “Basic Characteristics”
ϕ (deg)
± 20
± 20
λ0.1 (nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW96B
BPW96C
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T 0.5, tp 10 ms
Tamb 47 °C
t3s
Connected with Cu wire, 0.14 mm2
VCEO
VECO
IC
ICM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 23-Aug-11
1 Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



BPW96B
www.vishay.com
BPW96B, BPW96C
Vishay Semiconductors
200
160
120
RthJA
80
40
0
0
94 8300
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
V(BR)CEO
ICEO
CCEO
ϕ
70
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VS = 5 V, IC = 5 mA, RL = 100 Ω
VS = 5 V, IC = 5 mA, RL = 100 Ω
VS = 5 V, IC = 5 mA, RL = 100 Ω
λp
λ0.1
VCEsat
ton
toff
fc
TYP.
1
3
± 20
850
450 to 1080
2.0
2.3
180
MAX.
200
0.3
UNIT
V
nA
pF
deg
nm
nm
V
μs
μs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector light current
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
PART SYMBOL
BPW96B
BPW96C
Ica
Ica
MIN.
2.5
4.5
TYP.
4.5
8
MAX.
7.5
15
UNIT
mA
mA
Rev. 1.8, 23-Aug-11
2 Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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