N-Channel MOSFET. FTL540A Datasheet

FTL540A MOSFET. Datasheet pdf. Equivalent


Part FTL540A
Description N-Channel MOSFET
Feature FTL540A N-Channel MOSFET Applications: • Automotive • DC Motor Control Features: • RoHS Compliant .
Manufacture IPS
Datasheet
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FTL540A N-Channel MOSFET Applications: • Automotive • DC Mo FTL540A Datasheet
Recommendation Recommendation Datasheet FTL540A Datasheet




FTL540A
FTL540A
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTL540A
PACKAGE
TO-262
BRAND
FTL540A
Pb Lead Free Package and Finish
VDSS
100V
RDS(ON) (Max.)
ID
44 m:33A
TO-262
D
G
G
D
S
PackagesNot to Scale
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=1.0 mH
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTL540 A
100
33
Figure 3*
Figure 6*
150
1
± 20
750
Figure 8
5.0
U nits
V
A
W
W/oC
V
mJ
V/ ns
300 oC
260
-55to175R&
*Drain Current limited by Maximum Package Current Rating, 75 Amps
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
©2011 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 1.0
-- -- 65
Page 1 of 9
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +oC.
1 cubic foot chamber, free air.
FTL540A REV. A Sep.2011



FTL540A
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
'BVDSS/' TJ Coefficient, Figure 11.
100 --
-- 0.11
Max.
--
--
-- -- 1.0
IDSS Drain-to-Source Leakage Current
-- -- 100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
μA
nA
Test Conditions
VGS=V, ID=μA
Reference to oC,
ID= μA
VDS=V, VGS=V
VDS=V, VGS=V
TJ= oC
VGS=+ V
VGS= -V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
--
2.0
30
--
gfs Forward Transconductance
-- 80
Max. Units
44m:
4.0 V
-- S
Test Conditions
VGS=V, ID=17A
(NOTE *4)
VDS=VGS, ID=250PA
VDS=V, ID=17A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 2700
-- 300
-- 10
--
--
--
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
-- 37
-- 11
--
-- nC
Qgd Gate-to-Drain (“Miller”) Charge
-- 8
--
Test Conditions
VGS=V
VDS= V
f =MHz
Figure 
VDD=V
ID=A
VGS=V
Figure 
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 18
--
-- 20
--
ns
-- 53
--
-- 7
--
VDD=V
ID=A
VGS=V
RG= :
©2011 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTL540A REV. A Sep. 2011







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