N-Channel MOSFET. FTP08N08NE Datasheet

FTP08N08NE MOSFET. Datasheet pdf. Equivalent


Part FTP08N08NE
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP08N08NE Datasheet
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FTP08N08NE
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP08N08NE TO-220
BRAND
IPS
FTP08N08NE
VDSS
85V
Lead Free Package and Finish
RDS(ON)(Typ.)
6.6mΩ
ID
100A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP08N08NE
VDSS
Drain-to-Source Voltage
85
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
100
65
400
Power Dissipation
PD Derating Factor above 25
198
1.58
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
460
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.63
62.5
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP08N08NE REV. A. Nov. 2016



FTP08N08NE
FTP08N08NE
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 85 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=85V, VGS=0V
TJ=25
VDS=68V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 6.6
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
8.5
4
Units
Test Conditions
VGS=10V, ID=50A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 3564
-- 408
-- 237
-- 59.8
-- 17.6
-- 20.8
--
--
--
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
nC ID=50A,VDD=64V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 32.3 --
-- 22.7
-- 55.5
-- 13.9
--
--
--
ns VDD=40V, ID=50A,
VG=10V RG=5Ω
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP08N08NE REV. A. Nov. 2016







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