N-Channel MOSFET. FTP07N07N Datasheet

FTP07N07N MOSFET. Datasheet pdf. Equivalent


Part FTP07N07N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP07N07N Datasheet
Recommendation Recommendation Datasheet FTP07N07N Datasheet




FTP07N07N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP07N07N
TO-220
BRAND
IPS
FTP07N07N
VDSS
70V
Lead Free Package and Finish
RDS(ON)(Typ.)
6.5mΩ
ID
80A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP07N07N
VDSS
Drain-to-Source Voltage
70
ID Continuous Drain Current
Continuous Drain Current TC =100
80
52
IDM Pulsed Drain Current (NOTE *1)
320
Power Dissipation
PD Derating Factor above 25
VGS Gate-to-Source Voltage
156
1.25
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
325
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.8
62.5
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP07N07N REV. A. Jul. 2017



FTP07N07N
FTP07N07N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 70 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=70V, VGS=0V
TJ=25
VDS=56V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 6.5
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
7.9
4
Units
mΩ
V
Test Conditions
VGS=10V, ID=40A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (Miller) Charge
-- 2595
-- 337
-- 174
-- 50.7
-- 11.6
-- 18.3
--
--
--
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
nC ID=40A,VDD=56V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 22
--
-- 21
-- 44.5
-- 8.6
--
--
--
ns
VDD=35V, ID=40A,
VG=10V RG=3
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP07N07N REV. A. Jul. 2017







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