N-Channel MOSFET. FTP16N06B Datasheet

FTP16N06B MOSFET. Datasheet pdf. Equivalent


Part FTP16N06B
Description N-Channel MOSFET
Feature FTP16N06B N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • Unin.
Manufacture IPS
Datasheet
Download FTP16N06B Datasheet


FTP16N06B N-Channel MOSFET Applications: • Automotive • DC FTP16N06B Datasheet
Recommendation Recommendation Datasheet FTP16N06B Datasheet




FTP16N06B
FTP16N06B
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTP16N06B
PACKAGE
TO-220
BRAND
IPS
Pb Lead Free Package and Finish
VDSS
60V
RDS(ON) (Typ.)
13 m:
ID
65A
D
GDS
Package
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
Maximum
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
60
65
Figure 3
Figure 6
170
1.14
V
A
W
W/ oC
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=1mH
± 20
700
V
mJ
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
Figure 8
5.0
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 175
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
Maximum
0.88
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175 oC.
1 cubic foot chamber, free air.
©2013 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP16N06B REV. A. Jun. 2013



FTP16N06B
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage
'BVDSS/' TJ
BreakdownVoltage Temperature
Coefficient, Figure 11.
60 --
-- 0.06
--
--
-- -- 1.0
IDSS Drain-to-Source Leakage Current
-- -- 100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
μA
nA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=60V, VGS=0V
VDS=48V, VGS=0V
TJ=150oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
--
2.0
13
--
gfs Forward Transconductance
-- 62
Max.
16
4.0
--
Units
m:
V
S
Test Conditions
VGS=10V, ID=40A
(NOTE *4)
VDS=VGS, ID=250uA
VDS=15V, ID=40A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
--
Typ.
1780
360
100
Max.
--
--
--
Units
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 42 --
-- 9.0 --
-- 13 --
nC
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=30V
ID=30A
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 17 --
-- 61 --
-- 45 --
-- 26 --
ns
VDD=30V
ID=30A
VGS=10 V
RG=9.1 :
©2013 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP16N06B REV. A. Jun. 2013







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