N-Channel MOSFET. FTE10N06NA Datasheet

FTE10N06NA MOSFET. Datasheet pdf. Equivalent


Part FTE10N06NA
Description N-Channel MOSFET
Feature FTE10N06NA N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 60V Lead Free Package a.
Manufacture IPS
Datasheet
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FTE10N06NA N-Channel MOSFET Applications: ● Adaptor ● Charg FTE10N06NA Datasheet
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FTE10N06NA
FTE10N06NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
8mΩ
ID
55A
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTE10N06NA SOP-8
BRAND
IPS
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTE10N06NA
VDSS
Drain-to-Source Voltage
60
ID Continuous Drain Current
Continuous Drain Current TC =100
55
8
IDM Pulsed Drain Current, VGS@10V
32
Power Dissipation
PD Derating Factor above 25
2.5
0.02
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy
320
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJA Junction-to-Ambient
Typ. Max. Units
Test Conditions
50 / W 1 cubic foot chamber, free air.
©2015 InPower Semiconductor Co., Ltd.
Page 1 of 4
FTE10N06NA REV. A. May. 2015



FTE10N06NA
FTE10N06NA
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 60 -- --
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient,
-- 0.71 --
Units
V
V/
-- -- 1
IDSS Drain-to-Source Leakage Current
μA
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
nA
-- -- -100
Test Conditions
VGS=0V, ID=250μA
Reference to 25,
ID=250μA
VDS=60V, VGS=0V
TJ=25
VDS=48V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
RDS(ON)
Static Drain-to-Source On-Resistance -- 8 10 mΩ
VGS(TH)
Gate Threshold Voltage
1 -- 3
V
gfs Forward Transconductance
-- 65 --
S
Test Conditions
VGS=10V, ID=4.8A
(NOTE *4)
VDS=VGS,ID=250uA
VDS=15V, ID=8A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Ma Units Test Conditions
x.
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 4050 --
-- 280 --
-- 180 --
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 57 --
-- 16 -- nC ID=8A,VDD=30V
-- 13 --
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 21
-- 27
-- 63
ns
VDD=30V, ID=4A,
VG=10V RG=9.1
-- 30
©2015 InPower Semiconductor Co., Ltd.
Page 2 of 4
FTE10N06NA REV. A. May. 2015







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