N-Channel MOSFET. FTP05N04N Datasheet

FTP05N04N MOSFET. Datasheet pdf. Equivalent


Part FTP05N04N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP05N04N Datasheet
Recommendation Recommendation Datasheet FTP05N04N Datasheet




FTP05N04N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP05N04N
TO-220
BRAND
IPS
FTP05N04N
VDSS
40V
Lead Free Package and Finish
RDS(ON)(Typ.)
3.6mΩ
IDSilicon limited
current
130A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP05N04N
VDSS
ID
IDM
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current, VGS@10V (NOTE *1)
40
130
83
520
Power Dissipation
PD Derating Factor above 25
125
1
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy(NOTE *2)
±20
221.1
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Max.
1
62.5
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 8
FTP05N04N REV. C. Dec. 2017



FTP05N04N
FTP05N04N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 40 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 500
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=40V, VGS=0V
TJ=25
VDS=32V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
StaticDrain-to-Source On-Resistance
Gate Threshold Voltage
-- 3.6
2 --
Max.
5
4
Units
Test Conditions
VGS=10V, ID=75A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate resistance
1 Ω VGS=0V, VDS=0V,
f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 8900
-- 550
-- 480
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
-- 160 --
-- 42 -- nC ID=20A,VDD=32V
-- 33
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 48
-- 88
-- 170
ns VDD=30V, ID=75A,
VG=10V RG=10Ω
-- 62
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 8
FTP05N04N REV. C. Dec. 2017







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