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PFP9N90E

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N-Channel MOSFET

Description
PFP9N90E / PFF9N90E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 50 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power...


Wing On

PFP9N90E

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