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PFD3N80
N-Channel MOSFET
Description
May 2011 PFU3N80 / PFD3N80 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.8 Ω (Typ.) @VGS=10V APPLICATION Low power battery chargers Switch mode power ...
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