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PFP6N70F

N-Channel MOSFET

Description

PFP6N70F / PFF6N70F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  RoHS PKG APPLICATION  Low power battery chargers  Switch mode p...

Wing On

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