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PFP7N65E

N-Channel MOSFET

Description

PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.35 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Su...

Wing On

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