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PFD4N65FG

N-Channel MOSFET

Description

PFU4N65FG / PFD4N65FG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch ...

Wing On

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