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PFD4N60EG

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N-Channel MOSFET

Description
PFU4N60EG / PFD4N60EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mo...


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PFD4N60EG

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