SGT40N60NPFDPN IGBT Datasheet

SGT40N60NPFDPN Datasheet, PDF, Equivalent


Part Number

SGT40N60NPFDPN

Description

600V FIELD STOP IGBT

Manufacture

Silan

Total Page 6 Pages
Datasheet
Download SGT40N60NPFDPN Datasheet


SGT40N60NPFDPN
SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum
performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
Low conduction loss
Fast switching
High input impedance
NOMENCLATURE
ORDERING INFORMATION
Part No.
SGT40N60NPFDPN
Package
TO-3P
Marking
40N60NPFD
Material
Pb free
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25°C
TC=100°C
Pulsed Collector Current
Maximum Power Dissipation (TC=25°C)
Operating Junction Temperature
Storage Temperature Range
VCE
VGE
IC
ICM
PD
TJ
Tstg
600
±20
80
40
120
290
2.32
-55+150
-55+150
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Packing
Tube
Units
V
V
A
A
W
W/°C
°C
°C
Rev.:1.1
Page 1 of 6

SGT40N60NPFDPN
Silan
Microelectronics
SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (FRD)
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJC
RθJA
Ratings
0.24
1.4
35.5
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test conditions
Min.
Typ.
Collector to Emitter Breakdown
Voltage
C-E Leakage Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
BVCE
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Est
Qg
Qge
Qgc
VGE=0V,IC=250uA
VCE=600V,VGE=0V
VGE=20V,VCE=0V
IC=250uA,VCE=VGE
IC=40A,VGE=15V
IC=40A,VGE=15V
TC=125°C
VCE=30V
VGE=0V
f=1MHz
VCE=400V
IC=40A
Rg=10Ω
VGE=15V
Inductive Load,
VCE = 300V, IC=20A,
VGE = 15V
600 --
-- --
-- --
4.0 5.0
-- 1.8
-- 2.1
-- 1850
-- 180
-- 50
-- 18
-- 80
-- 110
-- 105
-- 1.87
-- 0.68
-- 2.55
-- 100
-- 11
-- 52
ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test conditions
Min.
Typ.
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 20A TC=25°C
Vfm
IF = 20A TC=125°C
Trr IES =20A, dIES/dt=200A/μs
Qrr IES =20A, dIES/dt=200A/μs
--
--
--
--
1.9
1.5
32
74
Units
°C/W
°C/W
°C/W
Max.
--
200
±400
6.5
2.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Units
V
uA
nA
V
V
V
pF
ns
mJ
nC
Max.
2.6
--
--
--
Units
V
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 2 of 6


Features SGT40N60NPFDPN 40A、600V SGT40N60 NPFDPN (Field Stop) UPSSMPS PFC  40A600VVCE(sat)()=1.8V@IC=40A    C 2 1 G 3 E 1 23 TO-3P IGBT ,2020A N Channel E:ESD :ESD SGT 40 N E 60 □□□□ PN :1201200V , PNTO-3P D: FRD : FRD F: Field stop : Fi eld stop T: Trench : Trench NP:NPT P: P T SGT40N60NPFDPN TO-3P .
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