STOP IGBT. SGT40N60NPFDPN Datasheet

SGT40N60NPFDPN IGBT. Datasheet pdf. Equivalent


Silan SGT40N60NPFDPN
SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum
performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
Low conduction loss
Fast switching
High input impedance
NOMENCLATURE
ORDERING INFORMATION
Part No.
SGT40N60NPFDPN
Package
TO-3P
Marking
40N60NPFD
Hazardous Substance Control
Pb free
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25°C
TC=100°C
Pulsed Collector Current
Maximum Power Dissipation (TC=25C)
Operating Junction Temperature
Storage Temperature Range
Symbol
VCE
VGE
IC
ICM
PD
TJ
Tstg
Ratings
600
±20
80
40
120
290
2.32
-55+175
-55+175
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Packing
Tube
Units
V
V
A
A
W
W/C
C
C
Rev.:1.3
Page 1 of 6


SGT40N60NPFDPN Datasheet
Recommendation SGT40N60NPFDPN Datasheet
Part SGT40N60NPFDPN
Description 600V FIELD STOP IGBT
Feature SGT40N60NPFDPN; SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT .
Manufacture Silan
Datasheet
Download SGT40N60NPFDPN Datasheet




Silan SGT40N60NPFDPN
SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (FRD)
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJC
RθJA
Ratings
0.24
1.4
35.5
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter
Breakdown Voltage
C-E Leakage Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Symbol
Test conditions
Min.
BVCE
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Est
Qg
Qge
Qgc
VGE=0V,IC=250uA
VCE=600V,VGE=0V
VGE=20V,VCE=0V
IC=250uA,VCE=VGE
IC=40A,VGE=15V
IC=40A,VGE=15V,TC=125C
VCE=30V
VGE=0V
f=1MHz
VCE=400V
IC=40A
Rg=10Ω
VGE=15V
Inductive Load,
VCE = 300V, IC=20A,
VGE = 15V
600
--
--
4.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
5.0
1.8
2.1
1850
180
50
18
80
110
105
1.87
0.68
2.55
100
11
52
ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Vfm
Trr
Qrr
Test conditions
IF = 20A TC=25C
IF = 20A TC=125C
IES =20A, dIES/dt=200A/μs
IES =20A, dIES/dt=200A/μs
Min.
--
--
--
--
Typ.
1.9
1.5
32
74
Units
C/W
C/W
C/W
Max.
--
200
±500
6.5
2.7
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Units
V
uA
nA
V
V
V
pF
ns
mJ
nC
Max.
2.6
--
--
--
Units
V
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 6



Silan SGT40N60NPFDPN
SGT40N60NPFDPN_Datasheet
TYPICAL CHARACTERISTICS CURVE
Figure 1. Typical output characteristics
120
TC=25°C
100
20V
15V
12V
80
10V
60
40
VGE=8V
20
0
0 1.5 3.0 4.5 6.0
Collector-Emitter voltage VCE(V)
Figure 3. Typical saturation voltage characteristic
120
Emitter in
100 common
VGE=15V
80
TC=25°C
60 TC=125°C
40
20
0
0 1 2 3 45
Collector-Emitter voltage VCE(V)
Figure 5. Saturation voltage vs. VGE
20
Emitter in
common
TC=25°C
16
12 80A
8 40A
IC=20A
4
0
4 8 12 16 20
Gate-Emitter voltage VGE(V)
Figure 2. Typical output characteristics
120
TC=125°C
100
20V
15V
80 12V
10V
60
40 VGE=8V
20
0
0 1.5 3.0 4.5 6.0
Collector-Emitter voltageVCE(V)
Figure 4. Transmission characteristic
120
Emitter in
100 common
VGE=20V
80
60
40
TC=125°C
20
TC=25°C
0
4 5 6 7 8 9 10 11 12
Gate-Emitter voltage VGE(V)
Figure 6. Saturation voltage vs. VGE
20
Emitter in
common
TC=125°C
16
12 80A
8 40A
IC=20A
4
0
4 8 12 16 20
Gate-Emitter voltageVGE(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 3 of 6







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