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SGT40N60NPFDPN Data Sheet

600V FIELD STOP IGBT

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SGT40N60NPFDPN
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Ratings 600 ±20 80 40 120 290 2.32 -55~+175 -55~+175 HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Packing Tube Units V V A A W W/C C C Rev.:1.3 Page 1 of 6 SGT40N60NPFDPN_Datasheet THERMAL CHARACTERISTICS Parameter T.
SGT40N60NPFDPN

Download SGT40N60NPFDPN Datasheet
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Ratings 600 ±20 80 40 120 290 2.32 -55~+175 -55~+175 HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Packing Tube Units V V A A W W/C C C Rev.:1.3 Page 1 of 6 SGT40N60NPFDPN_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (FRD) Thermal Resistance, Junction to Ambient Symbol RθJC RθJC RθJA Ratings 0.24 1.4 35.5 ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Breakdown Voltage C-E Leakage Current G-E Leakage Current G-E Threshold Voltage Collector to Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off D.


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