ESD Protector. PESDHC2FD7VB Datasheet

PESDHC2FD7VB Protector. Datasheet pdf. Equivalent


Prisemi PESDHC2FD7VB
PESDHC2FD7VB
Bi-directional 7V High Capacitance ESD Protector
Description
The PESDHC2FD7VB protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage
induced transient events. They feature large cross-sectional area junctions
for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, low
operating voltage. It gives designer the flexibility to protect one bi-directional
line in applications where arrays are not practical.
DFN1006-2L(Bottom View)
Feature
300W peak pulse power per line (tP = 8/20μs)
DFN1006-2L package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
H7C
Marking (Top View)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Pin 1
Pin 2
Circuit Diagram
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.2
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PESDHC2FD7VB Datasheet
Recommendation PESDHC2FD7VB Datasheet
Part PESDHC2FD7VB
Description High Capacitance ESD Protector
Feature PESDHC2FD7VB; PESDHC2FD7VB Bi-directional 7V High Capacitance ESD Protector Description The PESDHC2FD7VB protects.
Manufacture Prisemi
Datasheet
Download PESDHC2FD7VB Datasheet




Prisemi PESDHC2FD7VB
ESD Protector
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
IF
VF
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ IF
PESDHC2FD7VB
I
IPP
VC VBR VRWM
IT
IR
IR
IT
V
VRWM VBR VC
IPP
Electrical characteristics per line@25(unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VCL
VC
VC
VC
Cj
Conditions
It = 1mA
VRWM = 7V T=25
IPP=16A tp=100ns
IPP=1A tP = 8/20μs
IPP=7A tP = 8/20μs
IPP=14.5A tP = 8/20μs
VR=0V f = 1MHz
Min.
7.5
Typ.
9.0
11.0
11.0
14.0
19.0
39.0
Max.
7.0
10.0
1.0
12.0
15.0
21.0
45.0
Units
V
V
μA
V
V
V
V
pF
Absolute maximum rating@25
Rating
Peak Pulse Power (tp=8/20μs)
Peak Pulse Current (tp=8/20μs)
Operating Temperature
Storage Temperature
Symbol
Ppp
Ipp
TJ
TSTG
Value
300
14.5
-55 to 150
-55 to 150
Units
W
A
Rev.06.2
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Prisemi PESDHC2FD7VB
ESD Protector
Typical Characteristics
tf=8μs
100
80
60
tP =20μs(IPP /2)
40
20
0
0
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
PESDHC2FD7VB
100
80
60
40
20
0
0
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
25
Pulse waveform: tp=8/20us
20
15
10000
1000
10
5
0
05
10 15
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
20
100
1
1 10 100 1000
Pulse Duration(us)
Fig 4. Non-Repetitive Peak Pulse Power vs. Pulse time
20
16
12
8
4
0
-4
-8
-12
-16
-20
-20 -15
Rev.06.2
-10 -5 0 5 10
TLP Voltage(v)
Fig 5. TLP Measurement
15 20
3
40
35
30
25
20
15
10
5
0
0
12 3 4 5 67
VR-Reverse voltage (V)
Fig 6. Capacitance vs. Reveres voltage
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