ESD Protector. PESDHC3D12VU Datasheet

PESDHC3D12VU Protector. Datasheet pdf. Equivalent


Prisemi PESDHC3D12VU
PESDHC3D12VU
ESD Protector
Description
The PESDHC3D12VU ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PESDHC3D12VU protects sensitive semiconductor components from damage
or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
The PESDHC3D12VU is available in a SOD-323 package with working voltages of 12 volt.
It gives designer the flexibility to protect one unidirectional line in applications where arrays
are not practical. Additionally, it may be sprinkledaround the board in applications
where board space is at a premium. It may be used to meet the ESD immunity
requirements of IEC 61000-4-2, (±30kV air, ±30kV contact discharge)
Feature
Applications
500W peak pulse power per line (tP = 8/20μs)
Cell phone handsets and accessories
SOD-323 package
Personal digital assistants (PDA’s)
Replacement for MLV(0805)
Notebooks, desktops, and servers
Unidirectional configurations
Portable instrumentation
Response Time is Typically < 1 ns
Cordless phones
Protect one I/O or power line
Digital cameras
Low clamping voltage
Peripherals
RoHS compliant
MP3 players
Transient protection for data lines to IEC 61000-4-2(ESD) ±30KV(air),
±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.5
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PESDHC3D12VU Datasheet
Recommendation PESDHC3D12VU Datasheet
Part PESDHC3D12VU
Description ESD Protector
Feature PESDHC3D12VU; PESDHC3D12VU ESD Protector Description The PESDHC3D12VU ESD protector is designed to replace multila.
Manufacture Prisemi
Datasheet
Download PESDHC3D12VU Datasheet




Prisemi PESDHC3D12VU
ESD Protector
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
IF
VF
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ IF
PESDHC3D12VU
I
IF
VC VBR VRWM
IR VF
IT
IPP
V
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Working Voltage
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VF
VC
VC
Cj
Conditions
It =1mA
VRWM =12V
IF =10mA
IPP=5A tP = 8/20μS
IPP=20A tP = 8/20μS
VR=2.5V f = 1MHz
Min.
13.5
Typ.
Max.
12
1
0.8
19.0
27.0
100
Units
V
V
μA
V
V
V
pF
Absolute maximum rating@25
Rating
Unidirectional Peak Pulse Power (tp=8/20μS)
Maximum Peak Pulse Current ( tP = 8/20μS )
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppp
Ipp
TL
TJ
TSTG
Value
500
20
260 (10 sec)
-55 to +125
-55 to +150
Units
W
A
Rev.06.5
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Prisemi PESDHC3D12VU
ESD Protector
PESDHC3D12VU
Typical Characteristics
100
80
60
40
20
0
0
tf=8μs
tP =20μs(IPP /2)
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
25 30
100
80
60
40
20
0
0
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
10000
1000
100
10
1
10 100
Pulse Duration(us)
1000
Fig 3. Non Repetitive Peak Pulse Power vs. Pulse time
30
Pulse waveform: tp=8/20us
25
20
15
10
5
0 5 10 15 20
IPP-Peak pulse current(A)
Fig 4. Clamping voltage vs. Peak pulse current
25
Rev.06.5
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