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Protection Devices. UDT23A24L01 Datasheet |
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![]() UDT23AXXL01 SERIES
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s UDT23AXXL01 series are ultra low capacitance TVS
arrays designed to protect high speed data interfaces. This series
has been specifically designed to protect sensitive components
which are connected to high-speed data and transmission lines
from overvoltage caused by electrostatic discharge (ESD), cable
discharge events(CDE) and electrical fast transients(EFT).The series
has a maximum capacitance of only 1.2pF. This means it can be used
on circuits operating in excess of 3GHz without signal attenuation.
Features
● IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
● SOT-23 surface mount package
● Protects one high speed data line
● Peak power dissipation of 400W under 8/20μs waveform
● Working voltage: 3.3V, 5V, 12V, 15V and 24V
● Low leakage current
● Ultra low capacitance and clamping voltage
● Solid-state silicon avalanche technology
● Lead Free/RoHS compliant
● Solder reflow temperature: Pure Tin-Sn, 260~270℃
● Flammability rating UL 94V-0
● Meets MSL level 1, per J-STD-020
Pin Configuration
Applications
● HDMI interface protection
● Mobile display digital interface
● RF/Antenna circuits
● USB 2.0 & Firewire ports
● GaAs photodetector protection
● HBT power Amp protection
● Infiniband transceiver protection
UDT23AXXL01
Unidirectional
Protection
UDT23AXXL01
Bidirectional
Protection
Revision:31-Jul-15
www.brightking.com
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![]() Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
ESD voltage (Air discharge)
Storage & operating temperature range
UDT23AXXL01 SERIES
Symbol
PPP
VESD
TSTG ,TJ
Value
400
±8
±15
-55~+150
Unit
W
kV
℃
Electrical Characteristics (TJ=25℃)
UDT23A03L01 (Marking: B SJ)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
VRWM
VBR
IR
VC
VC
Off state junction capacitance
CJ
UDT23A05L01 (Marking: B SK)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
Condition
Min. Typ. Max. Unit
3.3 V
IBR=1mA
VR=3.3V
IPP=1A
4
V
50 μA
8V
IPP=5A
10 V
0Vdc,f=1MHz
Between I/O
pins and GND
1.2 pF
Condition
Min. Typ. Max. Unit
5V
IBR=1mA
VR=5V
IPP=1A
IPP=5A
6
V
5 μA
9.5 V
12 V
0Vdc,f=1MHz
Between I/O
pins and GND
1.2 pF
Revision:31-Jul-15
www.brightking.com
|
![]() Electrical Characteristics (TJ=25℃)
UDT23A12L01 (Marking: B SL)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
VRWM
VBR
IR
VC
VC
Off state junction capacitance
CJ
UDT23A15L01 (Marking: B SM)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
UDT23A24L01 (Marking: B SN)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
UDT23AXXL01 SERIES
Condition
Min. Typ. Max. Unit
12 V
IBR=1mA
VR=12V
13.3
V
1 μA
IPP=1A
IPP=5A
0Vdc,f=1MHz
Between I/O
pins and GND
19 V
24 V
1.2 pF
Condition
Min. Typ. Max. Unit
15 V
IBR=1mA
VR=15V
16.7
V
1 μA
IPP=1A
24 V
IPP=5A
0Vdc,f=1MHz
Between I/O
pins and GND
30 V
1.2 pF
Condition
Min. Typ. Max. Unit
24 V
IBR=1mA
VR=24V
IPP=1A
IPP=5A
0Vdc,f=1MHz
Between I/O
pins and GND
26.7
V
1 μA
43 V
55 V
1.2 pF
Revision:31-Jul-15
www.brightking.com
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