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TVS Diode. ST0561D2 Datasheet |
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![]() ST0561D2
1-Line Bi-directional TVS Diode
Description
The ST0561D2 is a bi-directional TVS diode, utilizing leading
monolithic silicon technology to provide fast response time and
low ESD clamping voltage, making this device an ideal solu-
tion for protecting voltage sensitive data lines. The ST0561D2
complies with the IEC 61000-4-2 (ESD) standard with ±15kV
air and ±8kV contact discharge. It is assembled into an ultra-
small 0.6x0.3x0.3mm lead-free DFN package. The small size,
and high ESD surge protection make ST0561D2 an ideal
choice to protect cell phone, digital video interfaces.
Mechanical Characteristics
♦ Package: DFN0603-2
♦ Lead Finish: NiPdAu
♦ Case Material: “Green” Molding Compound.
♦ UL Flammability Classification Rating 94V-0
♦ Moisture Sensitivity: Level 3 per J-STD-020
♦ Terminal Connections: See Diagram Below
♦ Marking Information: See Below
Features
♦ Ultra small package: 0.6x0.3x0.3mm
♦ Ultra low leakage: nA level
♦ Low operating voltage: 5V
♦ Low clamping voltage
♦ 2-pin leadless package
♦ Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
– IEC61000-4-5 (Lightning) 7A (8/20µs)
♦ RoHS Compliant
Applications
♦ Peripherals
♦ Audio Players
♦ Portable Instrumentation
♦ Notebooks and Handhelds
♦ Personal Digital Assistants
♦ Keypads, Side Keys, LCD Displays
Ordering Information
Part Number
ST0561D2
Packaging
15000/Tape & Reel
Reel Size
7 inch
Dimensions
Schematic and PIN Configuration
1
Maximum Dimensions (mm)
Rev. 1_Jul, 2014
1 of 5
2
DFN0603-2 (Bottom View)
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![]() Absolute Maximum Ratings (TA=25˚C unless otherwise specified)
ST0561D2
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
IPP
VESD
TJ
Tstg
Value
105
7
±30
±30
−55 to +125
−55 to +150
Unit
W
A
kV
°C
°C
Electrical Characteristics (TA=25˚C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol Min Typ Max Unit Test Condition
VRWM
VBR
IR
VC
VC
CJ
6
5V
8 9 V IT = 1mA
0.5 uA VRWM = 5V
8 V IPP = 1A (8 x 20µs pulse)
15 V IPP = 7A (8 x 20µs pulse)
10 15 pF VR = 0V, f = 1MHz
Rev. 1_Jul, 2014
2 of 5
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![]() ST0561D2
Typical Performance Characteristics (TA=25˚C unless otherwise specified)
10
9
8
7
6
5
4
3
2
1
0
012345
Reverse Voltage_VR(V)
Junction Capacitance vs. Reverse Voltage
15
12
9
6
3
0
012345678
Peak Pulse Current_Ipp (A)
Clamping Voltage vs. Peak Pulse Current (tp = 8/20us)
100
90
80
70
60
50
40
30
20
10
0
0
Peak Pulse Current (Ipp)
Ipp/2
20 40 60
Time_t(uS)
8 X 20uS Pulse Waveform
80
10
1
0.1
0.01
0.1
1 10
Pulse Duration_tp(uS)
Peak Pulse Power vs. Pulse Time
100
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature_Ta(℃)
Power Derating Curve
ESD Clamping Voltage
8 kV Contact per IEC61000−4−2
Rev. 1_Jul, 2014
3 of 5
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