XBS104S14 Diode Datasheet

XBS104S14 Datasheet, PDF, Equivalent


Part Number

XBS104S14

Description

Schottky Barrier Diode

Manufacture

msksemi

Total Page 3 Pages
Datasheet
Download XBS104S14 Datasheet


XBS104S14
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING: SL
XBS104S14 SOD-123
SOD-123
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
Symbol XBS101S14 XBS103S14 XBS104S14
Non-Repetitive Peak Reverse Voltage
VRM
20
30
40
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
20
30
40
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
Average Rectified Output Current
Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Storage Temperature
IO
IFSM
IFRM
Pd
RθJA
TSTG
1
9
1.5
500
250
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
V(BR)
Test conditions
IR= 1mA
XBS104S14
Min
40
Max
Unit
V
V
V
A
A
A
mW
/W
Unit
V
Reverse voltage leakage current
IR VR
VR =40V XBS104S14
1 mA
Forward voltage
Diode capacitance
VF
XBS104S14 F=1A
IF=3A
CD VR=4V, f=1MHz
0.6 V
0.9
120 pF

XBS104S14
XBS104S14 SOD-123
Typical Characteristics
Forward Characteristics
10
1
0.1
0.0
0.4 0.8 1.2 1.6
FORWARD VOLTAGE V (V)
F
2.0
Reverse Characteristics
10
T =100
a
1
0.1
0.01
T =25
a
1E-3
01
10 20 30
REVERSE VOLTAGE V (V)
R
40
Capacitance Characteristics
1000
T =25
a
f=1MHz
100
10
0.1 1 10 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
600
500
400
300
200
100
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE T ()
a


Features FEATURES For use in low voltage, high fr equency inverters Free wheeling, and po larity protection applications. MARKING : SL XBS104S14 SOD-123 SOD-123 Maximu m Ratings and Electrical Characteristic s, Single Diode @Ta=25℃ Parameter S ymbol XBS101S14 XBS103S14 XBS104S14 No n-Repetitive Peak Reverse Voltage VRM 20 30 40 Peak Repetitive Peak Rever se Voltage VRRM Working Peak Reverse Voltage VRWM 20 30 40 DC Blocking Voltage VR RMS Reverse Voltage VR(RM S) 14 21 28 Average Rectified Outpu t Current Peak Forward Surge Current @t =8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance Ju nction to Ambient Storage Temperature IO IFSM IFRM Pd RθJA TSTG 1 9 1.5 500 250 -55~+150 ELECTRICAL CHARACTERISTI CS (Ta=25℃ unless otherwise specified ) Parameter Reverse breakdown voltage Symbol V(BR) Test conditions IR= 1mA XBS104S14 Min 40 Max Unit V V V A A A mW ℃/W ℃ Unit V Reverse voltage leakage current IR VR VR =40V XBS104S14 1 mA Forward voltage.
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