ESD Protector. PESDNC2FD5VB Datasheet

PESDNC2FD5VB Protector. Datasheet pdf. Equivalent

PESDNC2FD5VB Datasheet
Recommendation PESDNC2FD5VB Datasheet
Part PESDNC2FD5VB
Description ESD Protector
Feature PESDNC2FD5VB; PESDNC2FD5VB Bi-directional 5V Normal Capacitance ESD Protector Description The PESDNC2FD5VB prot.
Manufacture Prisemi
Datasheet
Download PESDNC2FD5VB Datasheet




Prisemi PESDNC2FD5VB
PESDNC2FD5VB
Bi-directional 5V Normal Capacitance ESD Protector
Description
The PESDNC2FD5VB protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage
induced transient events. They feature large cross-sectional area junctions
for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, low
operating voltage. It gives designer the flexibility to protect one bi-directional
line in applications where arrays are not practical.
DFN1006-2L(Bottom View)
Feature
45W peak pulse power per line (tP = 8/20μs)
DFN1006-2L package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
PB
Marking (Top View)
Pin 1
Pin 2
Circuit Diagram
Mechanical Characteristics
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
DFN1006-2L without plating
Rev.06.11
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Prisemi PESDNC2FD5VB
ESD Protector
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
PESDNC2FD5VB
I
IPP
VC VBR VRWM
IITR
IR
IT
V
VRWM VBR VC
IPP
Electrical characteristics per line@25(unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VCL
VC
VC
VC
Cj
Conditions
It = 1mA
VRWM = 5V T=25
IPP=16A tp=100ns
IPP=1A
IPP=3A
IPP=5.5A
VR=0V f = 1MHz
Min.
5.6
Typ.
7.0
10.5
7.5
8.0
8.5
15
Max.
5
7.8
1.0
8.0
9.0
9.5
20
Units
V
V
μA
V
V
V
V
pF
Absolute maximum rating@25
Rating
Peak Pulse Power (tp=8/20μs)
Peak Pulse Current (tp=8/20μs)
Operating Temperature
Storage Temperature
Symbol
Ppp
Ipp
TJ
TSTG
Rev.06.11
2
Value
45
5.5
-55 to 150
-55 to 150
Units
W
A
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Prisemi PESDNC2FD5VB
ESD Protector
Typical Characteristics
tf=8μs
100
80
60
tP =20μs(IPP /2)
40
20
0
0 5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
2010
Pulse waveform: tp=8/20us
169
25 30
12 8
87
46
05
00 11 22 33 44 55
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
66
20
12
4
-4
-12
-20
-12
Rev.06.11
Z0=50Ω
tr=2ns
tp=100n
s
-8 -4 0 4 8
TLP Voltage(v)
Fig 5. TLP Measurement
12
3
PESDNC2FD5VB
100
80
60
40
20
0
0
1000
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
100
10
1
1 10 100 1000
Pulse Duration(us)
Fig 4. Non-Repetitive Peak Pulse Power vs. Pulse time
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150
Temperature (ºC)
Fig 6.Typical Leakage Current vs. Temperature
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