TVS Protector. PTVSHC1DF24VB Datasheet

PTVSHC1DF24VB Protector. Datasheet pdf. Equivalent

PTVSHC1DF24VB Datasheet
Recommendation PTVSHC1DF24VB Datasheet
Part PTVSHC1DF24VB
Description Bi-directional 24V High Capacitance TVS Protector
Feature PTVSHC1DF24VB; PTVSHC1DF24VB Bi-directional 24V High Capacitance TVS Protector Description The PTVSHC1DF24VB trans.
Manufacture Prisemi
Datasheet
Download PTVSHC1DF24VB Datasheet




Prisemi PTVSHC1DF24VB
PTVSHC1DF24VB
Bi-directional 24V High Capacitance TVS Protector
Description
The PTVSHC1DF24VB transient voltage suppressor is designed to replace
multilayer varistors (MLVs) in portable applications such as cell phones,
notebook computers, and PDA’s. They feature large cross-sectional area
junctions for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when
compared to MLVs. The PTVSHC1DF24VB protects sensitive semiconductor
components from damage or upset due to electrostatic discharge (ESD) and
other voltage induced transient events. The PTVSHC1DF24VB is available in
a SOD-123FL package with working voltages of 24 volt.
SOD-123FL (Top View)
Feature
3500W Peak pulse power per line (tP = 8/20μs)
SOD-123FL package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Pin 1
Pin 2
Circuit Diagram
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.4
1
BZ
Marking (Top View)
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Prisemi PTVSHC1DF24VB
Transient Voltage Suppressor
Electronics Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
CJ
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
PTVSHC1DF24VB
I
IPP
VC VBRVRWM
IT
IR
IR
IT
V
VRWM VBR VC
IPP
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
Cj
Conditions
It =1mA
VRWM =24V
IPP=90A tP = 8/20μs
VR=0V f = 1MHz
Min.
25
Typ.
40
148
Max.
24
5
42
155
Units
V
V
μA
V
pF
Absolute maximum rating@25
Rating
Peak Pulse Power ( tP = 8/20μS )
Peak pulse current(tp=8/20us)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppp
IPP
TL
TJ
TSTG
Value
3500
90
260 (10 sec)
-55 to +150
-55 to +150
Units
W
A
Rev.06.4
2
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Prisemi PTVSHC1DF24VB
Transient Voltage Suppressor
Typical Characteristics
100 tf=8μs
80
60
tP =20μs(IPP /2)
40
20
0
0
60
5 10 15 20
t - Time -μs
Fig 1.Pulse Waveform
Pulse waveform: tp=8/20us
25 30
45
30
15
0
0 20 40 60 80 100
IPP-Peak pulse current (A)
Fig 3. Clamping voltage vs. Peak pulse current
10000
PTVSHC1DF24VB
100
80
60
40
20
0
0
300
240
25 50
75 100 125
TL – Lead Temperature -
Fig 2.Power Derating Curve
150
f=1MHz
180
120
60
0
0 0.5
1.0 1.5 2.0
VR-Reverse voltage (V)
2.5
Fig 4. Capacitance vs. Reveres voltage
1000
100
10
1 10 100 1000
Pulse Duration(us)
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.4
3
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